High purity HFC-41 Methyl Fluoride as a dry etching gas for Spacer etching
As one of the manufacturers of fluorine-containing chemicals, Yuji Tech has the production and purification technology of HFC-41, whose purity can arrive Grade 4N(99.99%).
Methyl Fluoride (CH3F) , also known as Fluoromethane, Freon 41, Halocarbon-41 and HFC-41, is a non-toxic, liquefied and flammable gas at standard temperature and pressure. It is an environmentally friendly dry etching gas with low GWP, which shows very high performance in plasma etching of silicon compound films in semiconductor manufacturing.The physical properties, package and shipping are as follows.
Physical Data
Molecular Weight |
34.03 |
Boiling point (℃) |
-78.4 |
Vapor pressure (bar, @0 ℃) |
19.65 |
Critical temperature (℃) |
44.5 |
Relative gas density (air = 1) |
1.2 |
Gas Density (@15 °C, 1 atm, kg/m3) |
2.18 |
Relative liquid density (water = 1) |
0.61 |
Explosion limits (%vol) |
2.6-21.7 |
Cylinder Data
Cylinder Size(L) |
Fill Weight(kg) |
Valve Outlet |
10.2 |
2 |
CGA 350 |
47 |
8 |
CGA 350 |
Specify CGA & Other cylinder connections are also available–please contact YUJI representative.
Shipping Information
DOT Name: Methyl Fluoride
DOT Hazard Class: 2.1
UN No.: UN 2454
DOT Label: Flammable Gas
CAS NO.: 593-53-3
Applications
Used as a composition in a mixture with other nonflammable refrigerant
Used as a dry etching gas in silicon-based integrated circuits
As a dry etching gas for Spacer etching
Time variation in the total positive ion flux in CH3F-O2-He plasma pulsed at 1 kHz for 75%, 50%, 20% and 10% dcs and continuous excitation (CW).[1]
1.A dielectric spacer, usually made of Si3N4, is also necessary around the gate to precisely define the channel length below the gate.
2. Processes for spacer etching “are one of the most critical steps of transistor fabrication technologies.
3. Silicon active layer is only 5-10nm thick, in order to ensure a high surface quality for the subsequent step of silicon epitaxy. Etching of the Si3N4 spacer can be achieved in CH3F-O2-He mixtures, which offer a high selectivity towards silicon.[1]
Reference:[1]https://www.sciencedirect.com/science/article/pii/S1631074818300389