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Summary of application patents related to the etching gas HFC-41

Introduction

Methyl Fluoride (CH3F) , also known as Fluoromethane, Freon 41, Halocarbon-41 and HFC-41, is a non-toxic, liquefied and flammable gas at standard temperature and pressure. It is an environmentally friendly dry etching gas with low GWP, which shows very high performance in plasma etching of silicon compound films in semiconductor manufacturing. Etching of the Si3N4 spacer can be achieved in CH3F-O2-He mixtures, which offer a high selectivity towards silicon. CH3F/C4F8 Ratio will have effect on the Oxide-to-Nitride Selectivity in a Self-Aligned-Contact etching process. CH3F is also expected to outpace capacity as 3D NAND flash start-ups.
 
Applicant and Patent
 

APPLICANT

PATENT NAME

United microelectronics corp.(TW)

Semiconductor device having spacer with tapered profile

APPLIED MATERIALS INC [US] 

Dielectric etch method with high source and low bombardment plasma providing high etch rates 

UNITED MICROELECTRONICS CORP

Semiconductor device and method for fabricating the same 

TOKYO ELECTRON LTD

Exhaust gas explosion prevention method for reduced pressure processing device 

HITACHI HIGH TECH CORP

Dry etching method 

LAM RES CORP

Line edge roughness control 

PROMOS TECHNOLOGIES INC 

Method of etching capable of avoiding loading effect and controlling the thickness of screen oxide 

CENTRAL GLASS CO LTD [JP]

Etching Gas 

TOKYO ELECTRON LTD

PLASMA TREATMENT METHOD AND PLASMA TREATMENT DEVICE

 FUJITSU SEMICONDUCTOR LTD [JP] 

Method of etching silicon nitride by a mixture of CH2F2, CH3F or CHF3 and an inert gas

CENTRAL GLASS CO LTD [JP]

Cleaning Gas   

SEMICONDUCTOR MFG INT SHANGHAI

Semiconductor device used in interconnection technology and manufacturing method thereof  

ADVANCED TECH MATERIALS [US] 

Cleaning of semiconductor processing systems 

TAIWAN SEMICONDUCTOR MFG

Method for forming a tapered profile insulator shape 

SAMSUNG ELECTRONICS CO LTD

Composition for a wiring, a wiring using the composition, a manufacturing method thereof, a display using the wiring and a manufacturing method thereof